SMBJ13CA Fairchild Semiconductor, SMBJ13CA Datasheet
SMBJ13CA
Manufacturer Part Number
SMBJ13CA
Description
TVS BIDIRECT 600W 13V SMB
Manufacturer
Fairchild Semiconductor
Series
SMBJr
Datasheet
1.SMBJ33A.pdf
(4 pages)
Specifications of SMBJ13CA
Voltage - Reverse Standoff (typ)
13V
Voltage - Breakdown
14.4V
Power (watts)
600W
Polarization
Bidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Polarity
Bidirectional
Channels
1 Channel
Clamping Voltage
21.5 V
Operating Voltage
13 V
Breakdown Voltage
14.4 V to 15.9 V
Termination Style
SMD/SMT
Peak Surge Current
27.9 A
Peak Pulse Power Dissipation
1500 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
3.95(Max) mm W x 4.75(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMBJ13CA
Manufacturer:
Littelfu
Quantity:
150 000
Part Number:
SMBJ13CA
Manufacturer:
LITTELFUSE/力特
Quantity:
20 000
Company:
Part Number:
SMBJ13CA-13-F
Manufacturer:
DIODES
Quantity:
120 000
Part Number:
SMBJ13CA-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
SMBJ13CA-E3/52
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SMBJ13CA-E3/52
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SMBJ13CA-E3/5B
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SMBJ13CA-TR
Manufacturer:
STMicroe
Quantity:
88 000
Part Number:
SMBJ13CA-TR
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
SMBJ13CAE3TR-13
Manufacturer:
Microsem
Quantity:
88 000
2011 Fairchild Semiconductor Corporation
P
I
I
T
T
Symbol
PPM
FSM
600 Watt Transient Voltage Suppressors
Absolute Maximum Ratings*
stg
J
PPM
*
Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.
Features
•
•
•
•
•
•
•
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Glass passivated junction.
600W Peak Pulse Power capability on
10/1000 s waveform.
Excellent clamping capability.
Low incremental surge resistance.
Fast response time; typically less
than 1.0 ps from 0 volts to BV for
bidirectional.
Typical I
UL certificate # E326243 and E210467.
unidirectional and 5.0 ns for
R
Peak Pulse Power Dissipation on 10/1000 s waveform
Peak Pulse Current on 10/1000 s waveform
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
less than 1.0 A above 10V.
superimposed on rated load (JEDEC method)
Transient Voltage Suppressors
SMBJ5V0(C)A - SMBJ170(C)A
DEVICES FOR BIPOLAR APPLICATIONS
- Electrical Characteristics apply in both directions.
Parameter
- Bidirectional types use CA suffix.
T
A
= 25°C unless otherwise noted
(Note 1)
ON UNIDIRECTIONAL DEVICES ONLY.
NO COLOR BAND ON BIDIRECTIONAL
COLOR BAND DENOTES CATHODE
SMB/DO-214AA
DEVICES.
-55 to +150
-55 to +150
see table
Value
600
100
SMBJ5V0(C)A-SMBJ170(C)A, Rev. I2
Units
W
A
A
C
C
Related parts for SMBJ13CA
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SMBJ13CA Summary of contents
Page 1
... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum. 2011 Fairchild Semiconductor Corporation SMB/DO-214AA COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. ...
Page 2
Electrical Characteristics Uni-directional Part Reverse Bi-directional (C) Marking* Stand-off Device Voltage V RWM SMBJ5V0(C)A KE SMBJ6V0(C)A KG SMBJ6V5(C)A KK SMBJ7V0(C)A KM SMBJ7V5(C)A KP SMBJ8V0(C)A KR SMBJ8V5(C)A KT SMBJ9V0(C)A KV SMBJ10(C)A KX SMBJ11(C)A KZ SMBJ12(C)A LE SMBJ13(C)A LG SMBJ14(C)A LK SMBJ15(C)A ...
Page 3
Typical Characteristics Peak Pulse Power Rating Curve 100 0.1 0.0001 0.001 0.01 0.1 PULSE WIDTH (ms) Pulse Waveform 150 º Pulse Width (td) is Defined ...
Page 4
CROSSVOLT â â â â â Rev. I2 ...