C8051F544-IM Silicon Laboratories Inc, C8051F544-IM Datasheet - Page 56

• Manufacturer Part Number: C8051F544-IM
• Description: IC 8051 MCU 8K FLASH 32-QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F54xr

Specifications of C8051F544-IM

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 32-QFN
• Mfg Application Notes: LIN Bootloader AppNote
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: SMBus (2-Wire/I²C), LIN, SPI, UART/USART
• Peripherals: POR, PWM, Temp Sensor, WDT
• Number Of I /o: 25
• Ram Size: 1.25K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.25 V
• Data Converters: A/D 25x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Processor Series: C8051F5x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 25
• Operating Supply Voltage: 1.8 V to 5.25 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F540DK
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1672 - BOARD PROTOTYPE W/C8051F540336-1669 - KIT DEVELOPMENT FOR C8051F540
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1677-5

C8051F54x
Table 6.10. Temperature Sensor Electrical Characteristics
VDDA
Table 6.11. Voltage Reference Electrical Characteristics
VDDA
56
Linearity
Slope
Slope Error*
Offset
Offset Error*
Power Supply Current
Tracking Time
*Note: Represents one standard deviation from the mean.
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature 
Coefficient
Power Consumption
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Parameter
25 °C ambient (REFLV = 0)
25 °C ambient (REFLV = 1), V
Internal
Load = 0 to 200 µA to AGND
4.7 µF tantalum and 0.1 µF bypass
0.1 µF bypass
Sample Rate = 200 ksps; VREF = 1.5 V
REFBE = 1 or TEMPE = 1
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.1
DD
= 2.6 V
Min
12
—
—
—
—
—
—
1.45
2.15
Min
1.5
—
—
—
—
—
—
—
—
—
±0.1
3.33
Typ
856
±14
88
18
—
1.50
2.20
Typ
1.5
1.2
2.1
38
30
46
21
—
5
3
Max
—
—
—
—
—
—
—
V
Max
1.55
2.25
10
50
40
—
—
—
—
—
DDA
—
mV/°C
µV/°C
Units
ppm/°C
µV/µA
mV
mV
Units
mV/V
µA
°C
µs
mA
ms
µA
µA
µA
µs
V
V