MC9S12XET256CAG Freescale Semiconductor, MC9S12XET256CAG Datasheet - Page 1019

• Manufacturer Part Number: MC9S12XET256CAG
• Description: MCU 16BIT 256K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XET256CAG

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 50MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 119
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Processor Series: S12XE
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store required for EEE.
Memory space in the D-Flash memory not required for EEE can be partitioned to provide nonvolatile
memory space for applications.
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
EEE (Emulated EEPROM) — A method to emulate the small sector size features and endurance
characteristics associated with an EEPROM.
EEE IFR — Nonvolatile information register located in the D-Flash block that contains data required to
partition the D-Flash memory and buffer RAM for EEE. The EEE IFR is visible in the global memory map
by setting the EEEIFRON bit in the MMCCTL1 register.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
27.1.2
27.1.2.1
Freescale Semiconductor
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512 Kbytes of P-Flash memory composed of one 256 Kbyte Flash block and two 128 Kbyte Flash
blocks. The 256 Kbyte Flash block consists of two 128 Kbyte sections each divided into
128 sectors of 1024 bytes. The 128 Kbyte Flash blocks are each divided into 128 sectors of 1024
bytes.
Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to program up to one phrase in each P-Flash block simultaneously
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
Features
P-Flash Features
MC9S12XE-Family Reference Manual , Rev. 1.23
Chapter 27 512 KByte Flash Module (S12XFTM512K3V1)
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