MC9S12XET256CAG Freescale Semiconductor, MC9S12XET256CAG Datasheet - Page 893

• Manufacturer Part Number: MC9S12XET256CAG
• Description: MCU 16BIT 256K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XET256CAG

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 50MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 119
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Processor Series: S12XE
• Core: HCS12
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 25
256 KByte Flash Module (S12XFTM256K2V1)
25.1
The FTM256K2 module implements the following:
Freescale Semiconductor
Revision
Number
V01.08
V01.09
V01.10
•
256 Kbytes of P-Flash (Program Flash) memory, consisting of 2 physical Flash blocks, intended
primarily for nonvolatile code storage
Introduction
14 Nov 2007
19 Dec 2007
25 Sep 2009
Revision
Date
25.4.2.8/25-935
25.4.2.5/25-932
25.3.2.1/25-905
25.4.2.4/25-932
25.4.2.7/25-934
25.3.2.1/25-905
25.4.1.2/25-924
25.5.2/25-953
25.4.2/25-929
25.4.2/25-929
25.3.1/25-898
25.3.2/25-903
25.4.2.12/25-
25.4.2.12/25-
25.4.2.12/25-
25.4.2.20/25-
25.1/25-893
25.6/25-953
Sections
Affected
MC9S12XE-Family Reference Manual , Rev. 1.23
938
938
938
947
Table 25-1. Revision History
- Changed terminology from ‘word program’ to “Program P-Flash’ in the BDM
unsecuring description,
- Added requirement that user not write any Flash module register during
execution of commands ‘Erase All Blocks’,
Flash’,
- Added statement that security is released upon successful completion of
command ‘Erase All Blocks’,
- Corrected Error Handling table for Load Data Field command
- Corrected Error Handling table for Full Partition D-Flash, Partition D-Flash,
and EEPROM Emulation Query commands
- Corrected P-Flash IFR Accessibility table
- Clarify single bit fault correction for P-Flash phrase
- Expand FDIV vs OSCCLK Frequency table
- Add statement concerning code runaway when executing Read Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Program Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Verify Backdoor
Access Key command from Flash block containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Add ACCERR condition for Disable EEPROM Emulation command
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
Section 25.4.2.11
Section 25.5.2
Description of Changes
Section 25.4.2.8
Section
25.4.2.8, and ‘Unsecure
893