FDC8601 Fairchild Semiconductor, FDC8601 Datasheet

MOSFET N-CH 100V TRENCH SSOT-6

FDC8601

Manufacturer Part Number
FDC8601
Description
MOSFET N-CH 100V TRENCH SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC8601

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
109 mOhm @ 2.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 50V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
TSOT-23-6, TSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC8601TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC8601
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC8601-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C
FDC8601
N-Channel Power Trench
100 V, 2.7 A, 109 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
.861
= 109 mΩ at V
= 176 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D
D
Pin 1
SuperSOT
GS
GS
S
= 10 V, I
= 6 V, I
-Pulsed
FDC8601
Device
TM
D
D
D
= 2.1 A
-6
= 2.7 A
T
D
A
®
= 25 °C unless otherwise noted
G
Parameter
MOSFET
DS(on)
Package
SSOT-6
1
General Description
This
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.
Applications
Load Switch
Synchronous Rectifier
Primary Switch
N-Channel
S
D
D
Reel Size
4
5
6
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
MOSFET
DS(on)
Tape Width
, switching performance and
is
8 mm
-55 to +150
Ratings
produced using Fairchild
100
±20
2.7
1.6
0.8
30
78
12
13
3
2
1
®
process that has
G
D
D
www.fairchildsemi.com
June 2010
3000 units
Quantity
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDC8601

FDC8601 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .861 FDC8601 ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C ® MOSFET General Description = 2.7 A This N-Channel D Semiconductor‘s advanced Power Trench = 2 been optimized for r ruggedness ...

Page 2

... R is guaranteed by design while R is determined by the user's board design. θJC θCA 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 Starting mH ©2010 Fairchild Semiconductor Corporation FDC8601 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 12 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDC8601 Rev °C unless otherwise noted 5 μ 500 400 300 200 100 50 75 100 125 150 0.1 ...

Page 4

... LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0. 175 C/W θ 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDC8601 Rev °C unless otherwise noted J 300 100 0 3.0 2 100 C J 1.0 0.5 0.0 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. Juncton-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC8601 Rev °C unless otherwise noted J SINGLE PULSE 175 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDC8601 Rev www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDC8601 Rev.C Preliminary Datasheet F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ ...

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