FDMA507PZ Fairchild Semiconductor, FDMA507PZ Datasheet

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FDMA507PZ

Manufacturer Part Number
FDMA507PZ
Description
MOSFET P-CH 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA507PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 5V
Input Capacitance (ciss) @ Vds
2015pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 mOhms
Forward Transconductance Gfs (max / Min)
33 S
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 7.8 A
Power Dissipation
2.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA507PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA507PZ
Manufacturer:
ST
0
Part Number:
FDMA507PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
FDMA507PZ
Single P-Channel PowerTrench
-20 V, -7.8 A, 24 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Low Profile - 0.8 mm maximum - in the package MicroFET
2X2 mm
HBM ESD protection level > 3.2K V typical (Note3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
507
= 24 mΩ at V
= 25 mΩ at V
= 35 mΩ at V
= 45 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
GS
GS
= -5 V, I
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
FDMA507PZ
Device
-Pulsed
D
= -7.8 A
D
D
D
= -7 A
= -5.5 A
= -4 A
T
A
= 25 °C unless otherwise noted
Parameter
MicroFET 2X2
Package
®
MOSFET
1
T
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.
The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.
Reel Size
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
12 mm
-55 to +150
Ratings
-7.8
145
-20
-24
2.4
0.9
±8
52
May 2010
www.fairchildsemi.com
3000 units
Quantity
Units
°C/W
°C
W
V
V
A

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FDMA507PZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 507 FDMA507PZ ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C ® MOSFET General Description This device is designed specifically for battery charge or load = -7 switching in cellular handset and other ultraportable applications features a MOSFET with low on-stade resistance ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev °C unless otherwise noted J Test Conditions = -250 µ ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 24 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev °C unless otherwise noted J µ s 0.6 0.8 1 100 125 150 ( µ - 0.001 1.5 2 ...

Page 4

... - GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev °C unless otherwise noted - 0.1 0. PULSE WIDTH (sec) 4 10000 1000 MHz 100 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev °C unless otherwise noted J SINGLE PULSE 145 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMA507PZ Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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