FDMS86252 Fairchild Semiconductor, FDMS86252 Datasheet

MOSFET N-CH 150V 16A POWER56

FDMS86252

Manufacturer Part Number
FDMS86252
Description
MOSFET N-CH 150V 16A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS86252

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
51 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
905pF @ 75V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
51 mOhms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
6.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS86252TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86252
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS86252
0
Company:
Part Number:
FDMS86252
Quantity:
2 248
Part Number:
FDMS86252L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS86252L
0
Company:
Part Number:
FDMS86252L
Quantity:
965
©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86252
N-Channel PowerTrench
150 V, 16 A, 51 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS86252
DS(on)
DS(on)
= 51 mΩ at V
= 70 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS86252
= 10 V, I
= 6 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
D
D
= 3.9 A
= 4.6 A
T
®
A
= 25 °C unless otherwise noted
D
MOSFET
Parameter
D
D
DS(on)
D
Bottom
Power 56
Package
and
1
S
T
T
T
T
T
S
C
A
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
C
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC-DC Conversion
S
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
150
±20
4.6
2.5
1.8
16
24
20
50
69
50
®
process that has
www.fairchildsemi.com
August 2010
3000 units
Quantity
4
3
2
1
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86252 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86252 FDMS86252 ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev.C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = 4 Semiconductor’s advanced Power Trench = 3 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... R is determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° 120 V, V ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 20 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev °C unless otherwise noted 4 μ 200 150 100 100 125 150 0.1 ...

Page 4

... THIS AREA IS 0.1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED J 0. 125 θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev °C unless otherwise noted J 1000 100 V = 100 100 2000 1000 μ ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve 5 P ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS86252 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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