FDMS86104 Fairchild Semiconductor, FDMS86104 Datasheet

MOSFET N-CH 100V 16A POWER56

FDMS86104

Manufacturer Part Number
FDMS86104
Description
MOSFET N-CH 100V 16A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS86104

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
923pF @ 50V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
24 mOhms
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Power Dissipation
73 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
6.7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS86104TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86104
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C1
FDMS86104
N-Channel PowerTrench
100 V, 16 A, 24 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86104
DS(on)
DS(on)
= 24 mΩ at V
= 39 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
Power 56
= 10 V, I
= 6 V, I
FDMS86104
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 5.5 A
= 7 A
D
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
DS(on)
Power 56
Package
S
S
1
S
T
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Pin 1
C
A
C
C
A
G
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC-DC Conversion
N-Channel
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
MOSFET
5
6
7
8
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
2.5
1.7
16
39
30
96
73
50
7
®
process thant has
November 2010
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS86104

FDMS86104 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86104 FDMS86104 ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev. C1 ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 5.5 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 30 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev °C unless otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 4 100 125 150 150 ...

Page 4

... Switching Capability THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 125 C/W θ 0. 0.005 0.05 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev °C unless otherwise noted J 2000 1000 100 100 4000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS86104 Rev. C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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