FCA76N60N Fairchild Semiconductor, FCA76N60N Datasheet

MOSFET N-CH 600V 76A TO-3PN

FCA76N60N

Manufacturer Part Number
FCA76N60N
Description
MOSFET N-CH 600V 76A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCA76N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
12385pF @ 100V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28 mOhms
Forward Transconductance Gfs (max / Min)
88 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
76 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCA76N60N
Manufacturer:
FAIRCHILD
Quantity:
10 000
©2010 Fairchild Semiconductor Corporation
FCA76N60N Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCA76N60N
N-Channel MOSFET
600V, 76A, 36mΩ
Features
• R
• Ultra Low Gate Charge ( Typ. Qg = 218nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 28mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
GS
D
= 10V, I
S
D
= 38A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
-Pulsed
(T
-Derate above 25
TO-3PN
C
o
C unless otherwise noted*
= 25
D
o
C)
C
C
= 25
= 100
o
1
C
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
-55 to +150
Ratings
Ratings
8022
48.1
25.3
5.43
4.34
600
±30
228
100
543
300
0.23
0.24
76
20
40
S
D
SupreMOS
www.fairchildsemi.com
May 2010
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FCA76N60N Summary of contents

Page 1

... Thermal Resistance, Case to Heat Sink (Typical) θJS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FCA76N60N Rev. A Description = 38A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 25.3A 25Ω, Starting T = 25° ≤ 76A, di/dt ≤ 200A/μs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCA76N60N Rev unless otherwise noted C Package Reel Size TO-3PN - Test Conditions I = 1mA 0V,T ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 100000 10000 1000 100 *Notes 1MHz 10 C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FCA76N60N Rev. A Figure 2. Transfer Characteristics 1000 100 10 *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 1000 100 V = 20V 10 GS ...

Page 4

... 150 Single Pulse 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 Single pulse 0.005 -5 10 FCA76N60N Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0 120 160 Figure 10. Maximum Drain Current 80 30 μ s 100 μ ...

Page 5

... FCA76N60N Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCA76N60N Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCA76N60N Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCA76N60N Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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