STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet

MOSFET N-CH 100V 120A TO-220

STP165N10F4

Manufacturer Part Number
STP165N10F4
Description
MOSFET N-CH 100V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheets

Specifications of STP165N10F4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
10500pF @ 25V
Power - Max
315W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
100 V
Continuous Drain Current
120 A
Power Dissipation
315 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10710-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP165N10F4
Manufacturer:
ST
Quantity:
8 000
Part Number:
STP165N10F4
Manufacturer:
ST
0
Features
Application
Switching applications
Description
The STP165N10F4 is an N-channel
enhancement mode Power MOSFET built with
STripFET™ DeepGATE™ technology with a new
gate structure. The product is tailored to minimize
on-resistance.
Table 1.
November 2010
STP165N10F4
N-channel enhancement mode
100% avalanche rated
Low gate charge
Very low on-resistance
Order code
STP165N10F4
Order code
Device summary
100 V
V
DSS
R
DS(on)
< 5.5 mΩ
165N10F4
Marking
max
STripFET™ DeepGATE™ Power MOSFET
N-channel 100 V, 4.4 mΩ , 120 A TO-220
120 A
Doc ID 15781 Rev 2
I
D
Figure 1.
Package
TO-220
Internal schematic diagram
STP165N10F4
TO-220
1
2
Packaging
3
Tube
www.st.com
1/12
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STP165N10F4 Summary of contents

Page 1

... Low gate charge ■ Very low on-resistance Application Switching applications Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance. Table 1. Device summary Order code ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 15781 Rev 2 STP165N10F4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP165N10F4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy AS T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... max rating max rating ± Parameter Test conditions MHz (see Figure 14) Doc ID 15781 Rev 2 STP165N10F4 Min. Typ 100 GS =125 ° 250 µ 4.4 D Min. Typ. 10750 - 939 603 192 = 120 Max. Unit V 1 µA 100 µA 100 5.5 mΩ ...

Page 5

... STP165N10F4 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... DS 10 Figure 5. AM08652v1 (A) 300 7V 250 6V 200 150 5V 100 ( temperature Figure 7. AM08654v1 R DS(on) (mΩ) 175 T (°C) 125 J Doc ID 15781 Rev 2 STP165N10F4 Thermal impedance δ=0.5 0.2 0.1 0.05 0.02 Zth=k Rthj-c δ=tp/τ 0.01 Single pulse tp τ Transfer characteristics = Static drain-source on resistance ...

Page 7

... STP165N10F4 Figure 8. Gate charge vs gate-source voltage Figure (V) V =50V =120A 100 0 50 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm 1.2 1.0 0.8 0.6 0.4 0.2 -75 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 0.7 0.6 0 AM08656v1 C (pF) 14100 12100 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15781 Rev 2 STP165N10F4 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STP165N10F4 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15781 Rev 2 Package mechanical data ® 9/12 ...

Page 10

... Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 15781 Rev 2 STP165N10F4 mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 0015988_Rev_S ...

Page 11

... STP165N10F4 5 Revision history Table 8. Document revision history Date 19-May-2009 12-Nov-2010 Revision 1 First release – Removed package H²PAK. 2 – Document status promoted from preliminary data to datasheet. Doc ID 15781 Rev 2 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15781 Rev 2 STP165N10F4 ...

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