STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet - Page 3

• Manufacturer Part Number: STP165N10F4
• Description: MOSFET N-CH 100V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP165N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 315W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 100 V
• Continuous Drain Current: 120 A
• Power Dissipation: 315 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10710-5

STP165N10F4
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. Starting T
Table 3.
Symbol
E
I
Symbol
R
DM
P
V
V
T
AS
R
thj-case
I
I
TOT
T
GS
DS
stg
D
D
thj-a
T
j
(1)
(2)
l
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
D
= 58 A, V
DD
C
= 50 V
Doc ID 15781 Rev 2
Parameter
= 25 °C
Parameter
GS
= 0)
C
C
= 25 °C
= 100 °C
- 55 to 150
Value
Value
± 20
0.48
62.5
315
100
120
110
480
315
500
150
2.1
Electrical ratings
°C/W
°C/W
W/°C
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
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