STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet - Page 6

• Manufacturer Part Number: STP165N10F4
• Description: MOSFET N-CH 100V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP165N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 315W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 100 V
• Continuous Drain Current: 120 A
• Power Dissipation: 315 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10710-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
BV
(A)
10
I
I
D
D
1
350
300
250
200
150
100
1.10
0.90
1.05
1.00
0.95
0.1
(A)
DSS
50
0
0
-75
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
V
GS
-25
1
1
=10V
25
I
2
D
10
=1mA
VDSS
75
3
7V
100
vs temperature
Tc=25°C
Tj=150°C
Single pulse
125
4
V
DS
175
5V
V
4V
6V
(V)
DS
Doc ID 15781 Rev 2
100µs
AM08651v1
1ms
10ms
AM08654v1
(V)
AM08652v1
T
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
10
R
10
DS(on)
K
300
200
100
250
150
-2
-1
(A)
50
(mΩ)
I
4.9
4.8
4.7
4.6
5.3
5.2
5.0
4.5
-5
5.1
D
0
0.1
δ=0.5
0
Single pulse
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
20
-4
0.01
2
V
GS
40
=10V
10
-3
0.02
4
60
V
10
DS
0.05
Zth=k Rthj-c
=2V
-2
80
6
δ=tp/τ
tp
τ
100
10
STP165N10F4
-1
8
280tok
120
t
p
(s)
AM08653v1
V
AM08655v1
I
GS
D
(A)
(V)