STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet - Page 7

• Manufacturer Part Number: STP165N10F4
• Description: MOSFET N-CH 100V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP165N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 315W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 100 V
• Continuous Drain Current: 120 A
• Power Dissipation: 315 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10710-5

STP165N10F4
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
V
(V)
0.6
(V)
1.2
1.0
0.2
V
0.8
0.4
0.7
0.6
12
10
0.5
GS
0.8
0.9
1.0
SD
6
2
8
4
0
-75
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
-25
20
50
40
V
I
DS
D
25
=120A
100
=50V
60
75
I
D
150
=250µA
80
125
100
200
T
T
J
T
J
=175°C
=-55°C
J
120
=25°C
175
Doc ID 15781 Rev 2
AM08658v1
AM08656v1
Q
AM08660v1
I
g
SD
T
(nC)
J
(A)
(°C)
Figure 11. Normalized on resistance vs
C
12100
10100
(norm)
14100
R
6100
4100
2100
8100
DS(on)
(pF)
100
2.2
1.7
1.2
0.7
0.2
-75
0
Crss
Capacitance variations
temperature
20
-25
40
V
25
I
D
GS
Electrical characteristics
=60A
=10V
60
75
80
Coss
125
100
Ciss
175
AM08657v1
AM08659v1
V
DS
T
J
(°C)
(V)
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