STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet - Page 8

• Manufacturer Part Number: STP165N10F4
• Description: MOSFET N-CH 100V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP165N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 315W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 100 V
• Continuous Drain Current: 120 A
• Power Dissipation: 315 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10710-5

Test circuits
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
1000
Doc ID 15781 Rev 2
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
STP165N10F4
off
t
off
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD