STP165N10F4 STMicroelectronics, STP165N10F4 Datasheet - Page 11

• Manufacturer Part Number: STP165N10F4
• Description: MOSFET N-CH 100V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP165N10F4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 315W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 100 V
• Continuous Drain Current: 120 A
• Power Dissipation: 315 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10710-5

STP165N10F4
5
Revision history
Table 8.
19-May-2009
12-Nov-2010
Date
Document revision history
Revision
1
2
First release
– Removed package H²PAK.
– Document status promoted from preliminary data to datasheet.
Doc ID 15781 Rev 2
Changes
Revision history
11/12