FMG1G50US60L Fairchild Semiconductor, FMG1G50US60L Datasheet - Page 121

• Manufacturer Part Number: FMG1G50US60L
• Description: IGBT MOLDING 600V 50A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G50US60L

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 30V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Small Signal Transistors – RF Amplifier Transistors (Continued)
KSC388
FPNH10
MPSH10
MPSH11
BF199
KSC1393
KSC838
KSC1675
MPSH24
KSP24
MPSH34
BF240
TO-92 PNP Configuration
MPSH81
TO-92S NPN Configuration
KSC2786
KSC2669
KSC2787
Products
V
CEO
25
25
25
25
25
30
30
30
30
30
40
40
20
20
30
30
(V)
V
CBO
30
30
30
30
40
30
35
50
40
40
40
40
20
30
35
50
(V) V
EBO
4
3
3
3
4
4
4
5
4
4
4
4
3
4
4
5
(V)
Max (A)
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.1
I
C
(MHz)
1100
1100
300
650
650
650
400
100
150
400
400
500
600
400
100
150
f
T
2-116
Discrete Power Products –
Min
60
60
40
40
30
65
60
40
40
20
60
38
40
30
40
40
Max
200
180
240
240
225
240
240
240
–
–
–
–
–
–
–
–
h
@V
FE
12.5
10
10
10
10
10
12
10
10
15
10
10
12
CE
6
6
6
(V) @I
12.5
C
4
4
4
7
2
2
1
8
8
7
1
5
1
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.2
0.5
0.5
0.5
0.2
0.4
0.3
0.5
0.3
0.4
0.3
–
–
–
–
V
@I
CE (sat)
C
15
10
10
10
10
10
10
–
–
–
–
4
4
4
1
5
(mA) @I
B
1.5
0.4
0.4
0.4
0.5
–
–
–
–
–
5
1
1
1
1
1
(mA)