FMG1G75US60L Fairchild Semiconductor, FMG1G75US60L Datasheet - Page 88

• Manufacturer Part Number: FMG1G75US60L
• Description: IGBT MOLDING 600V 75A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG1G75US60L

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.056nF @ 30V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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Bipolar Power Transistors – General Purpose Transistors (Continued)
BD433
BD435
BD437
BD439
BD441
KSE200
MJE200
KSD1691
TO-126 PNP Configuration
KSA1142
KSA1406
KSA1381
KSE350
MJE350
KSA1220
KSA1220A
BD136
BD138
BD140
BD234
BD376
BD236
BD378
BD238
BD380
KSB772
KSE170
MJE170
BD176
KSB744
BD178
KSE171
MJE171
KSB744A
BD180
Products
I
C
0.1
0.1
0.1
0.5
0.5
1.2
1.2
1.5
1.5
1.5
4
4
4
4
4
5
5
5
2
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
(A) V
CEO
180
200
300
300
300
120
160
22
32
45
60
80
25
25
60
45
60
80
45
45
60
60
80
80
30
40
40
45
45
60
60
60
60
80
(V) V
CBO
180
200
300
300
300
120
160
100
100
22
32
45
60
80
40
40
60
45
60
80
45
50
60
75
40
60
60
45
70
60
80
80
70
80
(V) V
EBO
5
5
5
5
5
8
8
7
5
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
7
5
5
5
7
7
5
5
(V) P
C
12.5
12.5
12.5
12.5
12.5
12.5
12.5
36
36
36
36
36
15
15
20
20
20
20
20
25
25
25
25
25
25
10
30
10
30
10
30
(W)
8
7
7
Min
100
100
40
40
30
20
15
45
45
40
40
30
30
60
60
40
40
40
40
40
40
40
40
40
60
50
50
40
60
40
50
50
60
40
2-83
Discrete Power Products –
Max
180
180
400
320
120
320
240
240
320
320
250
250
250
375
375
375
400
250
250
250
320
250
250
250
320
250
–
–
–
–
–
–
–
–
h
@I
FE
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.05
0.05
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.3
0.3
0.1
0.1
0.5
0.1
0.1
0.5
C
2
2
2
1
(A) @V
10
10
10
10
CE
5
5
5
5
5
1
1
1
5
5
5
2
2
2
2
2
2
2
2
2
2
1
1
2
5
2
1
1
5
2
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.16
0.2
0.2
0.2
0.1
0.4
0.4
0.3
0.5
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.75
0.75
0.5
0.6
0.8
0.8
0.7
0.5
0.5
0.3
0.8
0.8
0.3
0.8
0.5
0.8
0.3
0.5
0.6
0.7
0.5
0.6
0.6
0.6
0.5
0.3
0.3
–
–
1
1
1
2
2
V
CE (sat)
0.05
0.03
0.02
0.5
0.5
0.5
0.5
0.5
1.5
0.5
0.5
1.5
C
2
2
2
2
2
2
2
2
–
–
1
1
1
1
1
1
1
1
2
1
1
1
(A) @I
0.005
0.003
0.002
0.05
0.05
0.05
0.05
0.05
0.15
0.05
0.05
0.15
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.1
0.1
0.1
B
–
–
(A)