FSB50550UTD Fairchild Semiconductor, FSB50550UTD Datasheet - Page 3

• Manufacturer Part Number: FSB50550UTD
• Description: MOD SPM 500V 1.2A SPM23-HD
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: FETr

Specifications of FSB50550UTD

• Configuration: 3 Phase Bridge
• Current: 2A
• Voltage: 500V
• Voltage - Isolation: 1500Vrms
• Package / Case: SPM23HD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSB50550UTD Rev. A
Electrical Characteristics
Inverter Part
Control Part
Bootstrap Diode Part
Note:
1. For the measurement point of case temperature T
2. BV
3. t
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 6 for the RBSOA test cir-
Symbol
Symbol
DBV
RBSOA
Symbol
effect of the stray inductance so that V
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 5 for the switching time definition with the switching test circuit of Figure 6.
cuit that is same as the switching test circuit.
R
UV
UV
BV
UV
UV
ON
E
I
I
I
DS(on)
V
t
E
DT
DSS
t
QCC
QBS
V
V
V
DSS
OFF
I
ON
OFF
I
t
and t
ON
IH
SD
CCD
CCR
IL
DSS
rr
BSD
BSR
IH
I
DSS
IL
RRM
T
I
FP
J
F
J
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
OFF
/
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
Drain-Source Breakdown
Voltage
Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage
Drain Current
Static Drain-Source
On-Resistance
Drain-Source Diode
Forward Voltage
Switching Times
Reverse-bias Safe Oper-
ating Area
Quiescent V
Quiescent V
Low-side Undervoltage
Protection (Figure 7)
High-side Undervoltage
Protection (Figure 8)
ON Threshold Voltage
OFF Threshold Voltage
Input Bias Current
Maixmum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
(Each HVIC Unless Otherwise Specified)
(Each FRFET Unless Otherwise Specified)
Parameter
Parameter
CC
BS
Current
Current
Parameter
DS
should not exceed BV
C
, please refer to Figure 4 in page 5.
(T
V
I
V
V
V
V
V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
V
T
High- and low-side FRFET switching (Note 4)
V
V
V
V
V
V
Logic High Level
Logic Low Level
V
V
D
J
IN
IN
CC
CC
PN
IN
PN
CC
BS
CC
CC
BS
BS
IN
IN
J
= 250mA, Referenced to 25°C
= 150°C
= 0V, I
= 0V, V
= 25°C, V
= 0V « 5V
=15V, V
= 5V
= 0V
=15V, V
= 300V, V
Undervoltage Protection Detection Level
Undervoltage Protection Reset Level
= V
= V
= 400V, V
Undervoltage Protection Detection Level
Undervoltage Protection Reset Level
BS
BS
DSS
D
DS
= 15V, V
= 15V, V
= 250mA (Note 2)
IN
in any case.
IN
CC
=0V
= 500V
=0V
CC
CC
=V
= V
T
T
= V
BS
C
C
Conditions
IN
IN
Conditions
Applied between V
Applied between V
V
Applied between IN and COM
Applied between IN and COM
= 25°C
= 25°C, Under 1ms Pulse Width
=15V Unless Otherwise Specified)
BS
B(V)
BS
= 5V, I
= 0V, I
3
= 15V, I
= 15V, I
-V, V
D
D
B(W)
= 1.2A
= -1.2A
D
Conditions
D
= 1.2A
-W
= I
DP,
CC
B(U)
V
and COM
-U,
DS
®
. V
=BV
PN
should be sufficiently less than this value considering the
DSS
,
Min Typ Max Units
Min Typ Max Units
500
7.4
8.0
7.4
8.0
2.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.53
600
500
100
-40 ~ 150
1.0
8.0
8.9
8.0
8.9
60
10
10
Rating
Full Square
-
-
-
-
-
-
-
-
500
0.5
2
250
160
100
1.4
1.2
9.4
9.8
9.4
9.8
0.8
20
2
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Units
mA
mA
mA
mA
mA
ns
ns
ns
mJ
mJ
V
V
W
V
V
V
V
V
V
V
°C
V
A
A