FSAM50SM60A Fairchild Semiconductor, FSAM50SM60A Datasheet - Page 6

• Manufacturer Part Number: FSAM50SM60A
• Description: IC SMART PWR MODULE SPM32-CA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSAM50SM60A

• Configuration: 3 Phase
• Current: 50A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM32CA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Resistance
Note
2. For the measurement point of case temperature(T
3. The thickness of thermal grease should not be more than 100um.
Package Marking and Ordering Information
Electrical Characteristics
Inverter Part
Note
4. t
Junction to Case Thermal
Resistance
Contact Thermal
Resistance
Collector - emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
Collector - emitter
Leakage Current
Device Marking
FSAM50SM60A
internally. For the detailed information, please see Fig. 4.
ON
and t
OFF
Item
Item
include the propagation delay time of the internal drive IC. t
(T
J
= 25°C, Unless Otherwise Specified)
FSAM50SM60A
Device
V
Symbol
t
t
CE(SAT)
C(OFF)
C(ON)
t
I
V
t
CES
OFF
ON
t
FM
Symbol
rr
R
R
R
th(j-c)Q
th(j-c)F
th(c-f)
V
V
V
V
I
V
(High-Low Side)
(Note 4)
V
C
CC
IN
IN
PN
IN
CE
C
= 50A, T
), please refer to Fig. 2.
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
= 0V
= 5V
= 5V ↔ 0V, Inductive Load
= 300V, V
= V
= V
SPM32-CA
CES
BS
Package
= 15V
J
, T
= 25°C
CC
J
= 25°C
= V
C(ON)
Condition
BS
and t
Condition
= 15V
C(OFF)
Real Size
I
I
C
C
are the switching time of IGBT itself under the given gate driving condition
= 50A, T
= 50A, T
-
J
J
= 25°C
= 25°C
Tape Width
Min.
-
-
-
-
-
-
-
-
-
Min. Typ.
-
-
-
Typ.
0.69
0.32
1.32
0.46
0.10
-
-
-
-
-
-
Max.
Quantity
0.06
Max.
1.0
1.5
250
2.4
2.1
-
-
-
-
-
8
°C/W
°C/W
°C/W
Unit
Unit
μ A
May 4, 2006
μ s
μ s
μ s
μ s
μ s
V
V