MUR820 Fairchild Semiconductor, MUR820 Datasheet

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MUR820

Manufacturer Part Number
MUR820
Description
DIODE ULTRAFAST 8A 200V TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MUR820

Voltage - Forward (vf) (max) @ If
975mV @ 8A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
100µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Through Hole
Package / Case
TO-220-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Other names
MUR820FS

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©2002 Fairchild Semiconductor Corporation
8A, 200V Ultrafast Diodes
MUR820 and RURP820 are ultrafast diodes with soft
recovery characteristics (t
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09223.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
MUR820
RURP820
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 157
o
C)
TO-220AC
TO-220AC
PACKAGE
rr
< 25ns). They have low forward
K
A
T
C
Data Sheet
= 25
o
MUR820
RURP820
C, Unless Otherwise Specified
BRAND
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
January 2002
CATHODE
(FLANGE)
STG
RWM
F(AV)
RRM
FRM
FSM
AVL
, T
R
D
J
JEDEC TO-220AC
MUR820, RURP820
RURP820
-65 to 175
MUR820
200
200
200
100
16
50
20
8
ANODE
CATHODE
MUR820, RURP820 Rev. B
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C

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MUR820 Summary of contents

Page 1

... Data Sheet 8A, 200V Ultrafast Diodes MUR820 and RURP820 are ultrafast diodes with soft recovery characteristics (t < 25ns). They have low forward rr voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications ...

Page 2

... 1.2 1.4 MIN TYP MAX - - 0.975 - - 0.895 - - 100 - - 500 - - through 25 (See Figure 9 100 o 175 100 C 0.1 0. 0.001 0 50 100 V , REVERSE VOLTAGE (V) R FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE UNITS V V µ A µ C/W 150 200 MUR820, RURP820 Rev. B ...

Page 3

... 150 125 100 100 V , REVERSE VOLTAGE ( 100 C, dI /dt = 200A/µ 0 FORWARD CURRENT ( AND t CURVES vs FORWARD CURRENT SQ. WAVE 140 145 150 155 160 T , CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 4 8 165 170 175 o C) MUR820, RURP820 Rev. B ...

Page 4

... AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS MUR820, RURP820 Rev ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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