FDMS7672AS Fairchild Semiconductor, FDMS7672AS Datasheet - Page 3

• Manufacturer Part Number: FDMS7672AS
• Description: MOSFET N-CH 30V SYNCFET POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7672AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 m Ohms
• Forward Transconductance Gfs (max / Min): 97 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7672AS Rev.C
Typical Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
0
0
Figure 1.
0.0
-75
1
Figure 5. Transfer Characteristics
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 18 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
V
T
V
-25
DS
J
GS
On-Region Characteristics
0.5
,
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
GS
GS
GS
0
2
= 10 V
= 4.5 V
= 4 V
T
J
25
= 25
µ
T
s
1.0
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 125
o
50
C
T
J
o
= 25 °C unless otherwise noted
C
75
3
1.5
o
100 125 150
C )
T
V
V
J
GS
GS
= -55
= 3.5 V
= 3 V
µ
o
s
C
2.0
4
3
0.001
0.01
100
0.1
10
12
10
12
10
1
8
6
4
2
8
6
4
2
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
T
= 0 V
J
V
= 3 V
= 125
0.2
SD
V
GS
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
= 3.5 V
Source Voltage
o
4
Source to Drain Diode
,
C
I
GATE TO SOURCE VOLTAGE (V)
D
I
T
D
0.4
30
= 18 A
J
,
V
DRAIN CURRENT (A)
= -55
T
GS
J
= 25
= 4 V
o
C
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
o
C
T
J
T
V
= 125
J
GS
= 25
0.8
= 4.5 V
60
o
o
C
C
8
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V
1.0
GS
= 10 V
µ
µ
s
s
1.2
90
10