FDP8443_F085 Fairchild Semiconductor, FDP8443_F085 Datasheet

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FDP8443_F085

Manufacturer Part Number
FDP8443_F085
Description
MOSFET N-CH 40V TO-220AB-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8443_F085

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
9310pF @ 25V
Power - Max
188W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP8443_F085 Rev. A
FDP8443_F085
N-Channel PowerTrench
40V, 80A, 3.5mΩ
Features
Typ r
Typ Q
Low Miller Charge
Low Q
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DS(on)
g(10)
rr
Body Diode
= 142nC at V
= 2.7mΩ at V
GS
GS
= 10V
= 10V, I
D
= 80A
®
MOSFET
1
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
March 2009
www.fairchildsemi.com

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FDP8443_F085 Summary of contents

Page 1

... GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2009 Fairchild Semiconductor Corporation FDP8443_F085 Rev. A ® MOSFET Applications Automotive Engine Control = 80A D Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator ...

Page 2

... Gate Resistance G Q Total Gate Charge at 10V g(TOT) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller“ Charge gd FDP8443_F085 Rev 25°C unless otherwise noted C Parameter o < 144 10V 10V, with C/W) θJA GS ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDP8443_F085 Rev ...

Page 4

... SINGLE PULSE 1E Figure 3. Normalized Maximum Transient Thermal Impedance 5000 V = 10V TRANSCONDUCTANCE GS MAY LIMIT CURRENT IN THIS REGION 1000 100 SINGLE PULSE FDP8443_F085 Rev. A 200 160 120 125 150 175 ( Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION( RECTANGULAR PULSE DURATION(s) Figure 4 ...

Page 5

... DUTY CYCLE = 0.5% MAX 175 GATE TO SOURCE VOLTAGE GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP8443_F085 Rev. A 500 10us ≠ 100 100us 10 1ms STARTING T 10ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching 200 ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 10000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDP8443_F085 Rev 250 μ 1.10 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8443_F085 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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