FCH35N60 Fairchild Semiconductor, FCH35N60 Datasheet - Page 5

• Manufacturer Part Number: FCH35N60
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperMOS™r

Specifications of FCH35N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 181nC @ 10V
• Input Capacitance (ciss) @ Vds: 6640pF @ 25V
• Power - Max: 312.5W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 79 mOhms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 312.5 W
• Forward Transconductance Gfs (max / Min): 28.8 S
• Gate Charge Qg: 139 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FCH35N60 Rev. A1