STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 14

• Manufacturer Part Number: STD8N65M5
• Description: MOSFET N-CH 650V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10878-2

Package mechanical data
14/20
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
Doc ID 16531 Rev 2
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
STD/F/I/P/U8N65M5
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max