STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 3

MOSFET N-CH 650V 7A DPAK

STD8N65M5

Manufacturer Part Number
STD8N65M5
Description
MOSFET N-CH 650V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD8N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10878-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD8N65M5
Manufacturer:
STMicroelectronics
Quantity:
2 000
Company:
Part Number:
STD8N65M5
Quantity:
100
STD/F/I/P/U8N65M5
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
R
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
DM
P
V
thj-case
thj-amb
V
E
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
l
j
(2)
(3)
(1)
≤ 7A, di/dt ≤ 400 A/µs, V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
Thermal resistance
junction-pcb max
Maximum lead
temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Parameter
C
j
= 25°C, I
= 25 °C)
Parameter
D
Peak
C
Doc ID 16531 Rev 2
= I
= 25 °C
< V
AR
, V
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
(BR)DSS.
50
DD
C
C
= 25 °C
= 100 °C
= 50V)
JMAX
100
)
1.79
300
TO-220,
D²PAK
I²PAK
62.5
Value
4.4
28
70
7
-55 to 150
DPAK,
IPAK
Value
± 25
120
150
15
2
30
Electrical ratings
TO-220FP
4.4
28
2500
7
62.5
300
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
mJ
°C
°C
°C
W
V
A
A
A
A
V
3/20

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