STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 8

• Manufacturer Part Number: STD8N65M5
• Description: MOSFET N-CH 650V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10878-2

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/20
Figure 14. Normalized gate threshold voltage
Figure 16. Switching losses vs gate resistance
V
GS(th)
1.00
0.80
(norm)
1.10
0.70
0.90
(μJ)
100
-50
10
E
1
0
vs temperature
(1)
-25
V
V
I
D
CL
GS
=4A
=400V
=10V
10
0
25
20
50
75
30
100
Eoff
40
T
J
Eon
(°C)
Doc ID 16531 Rev 2
AM08204v1
AM08206v1
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
R
BV
DS(on)
(norm)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
(norm)
1.0
DSS
0.5
1.5
2.0
-50
-50
temperature
-25
-25
0
0
V
I
25
D
GS
25
=3.5A
=10V
I
D
=1mA
50
VDSS
50
STD/F/I/P/U8N65M5
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08205v1
AM08203v1