STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 7

• Manufacturer Part Number: STD8N65M5
• Description: MOSFET N-CH 650V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10878-2

STD/F/I/P/U8N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
I
1000
D
V
(V)
100
(pF)
(A)
12
10
12
10
10
GS
C
2
0
8
6
4
8
6
4
2
0
1
0
0
0.1
V
Output characteristics
DS
V
GS
5
5
1
=10V
V
DD
I
D
=3.5A
=520V
10
10
10
100
15
15
7V
V
6.5V
5.5V
Q
6V
GS
V
DS
Doc ID 16531 Rev 2
g
(nC)
AM08197v1
AM08202v1
AM03195v1
V
(V)
7.5V
5V
DS
500
400
300
100
0
200
Ciss
Coss
Crss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
(Ohm)
I
D
DS(on)
E
0.56
0.50
0.58
0.54
0.52
(µJ)
(A)
12
10
oss
2.5
2.0
3.5
3.0
1.5
0.5
1.0
6
0
4
2
8
0
3
0
0
Transfer characteristics
100
4
V
DS
200 300
2
5
=20V
6
Electrical characteristics
V
GS
=10V
4
400
7
500 600
8
6
9
V
AM08201v1
AM08198v1
AM08200v1
V
I
GS
D
DS
(A)
(V)
(V)
7/20