STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 6

• Manufacturer Part Number: STD8N65M5
• Description: MOSFET N-CH 650V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10878-2

Electrical characteristics
2.1
6/20
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
I²PAK, D²PAK
Safe operating area for DPAK, IPAK Figure 5.
Safe operating area for TO-220FP
1
1
1
10
10
10
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16531 Rev 2
100µs
100µs
100µs
1ms
1ms
1ms
10µs
10ms
10µs
10ms
10µs
10ms
AM08194v1
AM08195v1
AM08196v1
Figure 3.
Figure 7.
Thermal impedance for TO-220,
I²PAK, D²PAK
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220FP
STD/F/I/P/U8N65M5