STD8N65M5 STMicroelectronics, STD8N65M5 Datasheet - Page 9

• Manufacturer Part Number: STD8N65M5
• Description: MOSFET N-CH 650V 7A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.56 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 7 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10878-2

STD/F/I/P/U8N65M5
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 16531 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
Vgs
Vds
P
Id
i
V
W
i
10%Vds
=20V=V
90%Vds
90%Vgs
P
w
on
on
2200
μF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
Tdelay-off
47kΩ
-off
L
Trise
Trise
D.U.T.
Tcross -over
47kΩ
100Ω
Tfall
Tfall
-
2200
μF
100nF
Concept waveform for Inductive Load Turn-off
Test circuits
3.3
μF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
9/20
G
DD
DD