MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 5

• Manufacturer Part Number: MRFE6VP6300HR5
• Description: FET RF 2N-CH 230MHZ 125V NI780-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP6300HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 26.5dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: NI-780H-4
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Other names: MRFE6VP6300HR5TR

RF Device Data
Freescale Semiconductor
1000
90
80
70
60
50
40
30
20
100
29
28
27
26
25
24
23
22
0.1
10
20
Figure 4. Capacitance versus Drain- -Source Voltage
1
Figure 6. Pulsed Power Gain and Drain Efficiency
0
0
V
Pulse Width = 100 μsec, 20% Duty Cycle
G
η
DD
Note: Each side of device measured separately.
ps
D
Measured with ±30 mV(rms)ac @ 1 MHz
V
Figure 8. Pulsed Drain Efficiency versus
GS
= 50 Vdc, I
50
= 0 Vdc
V
DD
P
P
10
V
out
= 30 V
out
100
DS
DQ
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
, DRAIN--SOURCE VOLTAGE (VOLTS)
versus Output Power
= 100 mA, f = 230 MHz
V
Pulse Width = 100 μsec, 20% Duty Cycle
DD
150
Output Power
= 50 Vdc, I
20
35 V
100
200
DQ
= 100 mA, f = 230 MHz
250
30
TYPICAL CHARACTERISTICS — PULSED
40 V
300
45 V
40
350
C
50 V
C
C
oss
rss
iss
600
400
50
90
80
70
60
50
40
30
20
29
28
27
26
25
24
23
22
21
10
Figure 9. Pulsed Power Gain and Drain Efficiency
V
Pulse Width = 100 μsec, 20% Duty Cycle
60
59
58
57
56
55
54
53
T
29
28
27
26
25
24
23
22
21
20
19
DD
C
26
= --30_C
0
= 50 Vdc, I
V
Pulse Width = 100 μsec, 20% Duty Cycle
P1dB = 55.4 dBm
(344 W)
DD
85_C
P2dB = 55.8 dBm (380 W)
Figure 5. Pulsed Output Power versus
27
= 50 Vdc, I
η
50
P
Figure 7. Pulsed Power Gain versus
D
out
DQ
25_C
, OUTPUT POWER (WATTS) PULSED
P
versus Output Power
= 100 mA, f = 230 MHz
MRFE6VP6300HR3 MRFE6VP6300HSR3
out
P3dB = 56.0 dBm (398 W)
28
100
P
in
, OUTPUT POWER (WATTS) PULSED
DQ
, INPUT POWER (dBm) PULSED
V
G
= 100 mA, f = 230 MHz
DD
ps
150
= 30 V
V
Pulse Width = 100 μsec, 20% Duty Cycle
29
Output Power
Input Power
DD
= 50 Vdc, I
100
200
30
35 V
DQ
250
31
= 100 mA, f = 230 MHz
40 V
85_C
300
32
Actual
Ideal
45 V
25_C
--30_C
350
33
600
50 V
90
80
70
60
50
40
30
20
10
400
34
5