MRFE6VP6300HR5 Freescale Semiconductor, MRFE6VP6300HR5 Datasheet - Page 6

• Manufacturer Part Number: MRFE6VP6300HR5
• Description: FET RF 2N-CH 230MHZ 125V NI780-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP6300HR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 230MHz
• Gain: 26.5dB
• Voltage - Rated: 125V
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: NI-780H-4
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Other names: MRFE6VP6300HR5TR

6
MRFE6VP6300HR3 MRFE6VP6300HSR3
--10
--20
--30
--40
--50
--60
--70
--80
30
29
28
27
26
25
5
10
900 mA
650 mA
I
DQ
1100 mA
V
f2 = 230.1 MHz, Two--Tone Measurements
Figure 12. Two- -Tone Power Gain versus
DD
5th Order
= 1600 mA
1400 mA
= 50 Vdc, I
3rd Order
7th Order
Figure 10. Intermodulation Distortion
10
Products versus Output Power
P
out
P
out
V
Two--Tone Measurements
, OUTPUT POWER (WATTS) PEP
DQ
DD
, OUTPUT POWER (WATTS) PEP
= 1600 mA, f1 = 230 MHz
= 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz
Output Power
TYPICAL CHARACTERISTICS — TWO- -TONE
100
100
500
400
--15
--20
--25
--30
--35
--40
--45
--50
--10
--20
--30
--40
--50
--60
--70
10
0.1
I
V
Two--Tone Measurements
DQ
V
Two--Tone Measurements
DD
DD
= 650 mA
Figure 13. Third Order Intermodulation
= 50 Vdc, f1 = 230 MHz, f2 = 230.1 MHz
= 50 Vdc, P
Figure 11. Intermodulation Distortion
900 mA
Products versus Two- -Tone Spacing
Distortion versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
out
TWO--TONE SPACING (MHz)
= 250 W (PEP), I
1400 mA
1
3rd Order
7th Order
5th Order
1100 mA
Freescale Semiconductor
DQ
1600 mA
100
= 1600 mA
RF Device Data
10
400
40