QEB421 Fairchild Semiconductor, QEB421 Datasheet - Page 2

• Manufacturer Part Number: QEB421
• Description: Infrared Emitters PLCC-2 ALGAAS LED
• Manufacturer: Fairchild Semiconductor

Specifications of QEB421

• Beam Angle: +/- 120
• Radiant Intensity: 48 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 180 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lens Shape: Circular
• Mounting Style: SMD/SMT
• Operating Voltage: 1.8 V
• Wavelength: 880 nm
• Package / Case: PLCC-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
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0.001
0.01
0.1
10
Fig. 1 Normalized Radiant Intensity vs. Forward Current
1
180
170
1
160
1.0
150
Normalized to:
I
t pw =100 us
Duty Cycle = 0.1%
T
F
140
A
= 100 mA Pulsed
0.8
= 25˚C
130
0.6
Fig.3 Radiation Diagram
120
0.4
110
I F - FORWARD CURRENT (mA)
10
0.2
100
0.0
0.0
90
80
0.2
70
0.4
60
0.6
100
50
0.8
40
30
1.0
20
10
0
Fig. 5 Spectral Response (TBD)
1000
2 OF 3
SURFACE MOUNT INFRARED
10
10
10
10
10
10
3
2
1
0
LIGHT EMITTING DIODE
2
1
0
-1
-2
-3
0.8
Fig. 4 Forward Voltage vs. Ambient Temperature
I
t pw = 100 us
Duty Cycle = 0.1%
T
F
A
-40
Pulsed
= 25˚C
Fig. 2 Forward Current vs. Forward Voltage
I
t
Duty Cycle = 0.1%
F
pw = 100 us
Pulsed
-20
1.0
T
V
A
F
- TEMPERATURE (˚C)
- FORWARD VOLTAGE (V)
0
I
F
= 50 mA
20
1.2
QEB421
40
2/26/01
60
1.4
I
I = 100 mA
F
F
= 20 mA
DS300385
80
100
1.6