MCT6SD Fairchild Semiconductor, MCT6SD Datasheet - Page 3

• Manufacturer Part Number: MCT6SD
• Description: Transistor Output Optocouplers 8-Pin Optocoupler Dual Ch Phototrans
• Manufacturer: Fairchild Semiconductor

Specifications of MCT6SD

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 25 V (Typ)
• Output Device: Transistor
• Output Type: DC
• Configuration: 2
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5000 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 30 mA
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP SMD Black
• Number Of Elements: 2
• Reverse Breakdown Voltage: 25V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: PDIP-B SMD
• Collector Current (dc) (max): 30mA
• Power Dissipation: 400mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCT6SD_NL

©2006 Fairchild Semiconductor Corporation
MCT6, MCT61, MCT62 Rev. 1.0.5
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All typicals at T
EMITTER
DETECTOR
SWITCHING CHARACTERISTICS (AC)
CURRENT TRANSFER RATIO, COLLECTOR-EMITTER (DC)
Symbol
Symbol
Symbol
V
BV
BV
R
C
I
CTR
CE(sat)
V
C
CEO
V
V
C
t
t
I
ISO
on
off
ISO
ISO
R
CEO
ECO
CE
R
F
J
Input Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
Non-Saturated Turn-on Time
Non-Saturated Turn-off Time
Saturation Voltage
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
MCT6
MCT61
MCT62
A
= 25°C
Characteristic
Characteristic
Parameter
(T
A
= 25°C unless otherwise specified)
R
I
I
I
F
F
F
L
= 10mA, V
= 5mA, V
= 16mA, I
= 100 , I
I
V
f = 1MHz
I-O
I-O
Test Conditions
Test Conditions
= 500VDC
10µA, t = 1min.
I
I
V
V
I
I
V
V
F
R
C
E
R
F
CE
CE
= 20mA
= 100µA, I
= 10µA
= 1.0mA, I
CE
Test Conditions
C
= 0V, f = 1MHz
= 5V
C
CE
= 10V, I
= 0V, f = 1MHz
= 2mA
= 2mA, V
= 5V
3
= 10V
F
F
F
= 0
= 0
= 0
CC
= 10V
Min.
5000
10
11
Min.
Min.
100
3.0
20
50
30
6
Typ.*
0.5
Typ.*
Typ.*
0.001
0.15
2.4
2.4
1.2
25
50
85
13
5
8
Max.
Max.
Max.
0.40
100
1.5
10
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Vac(rms)
Units
Units
pF
Units
µA
nA
µs
µs
pF
pF
%
V
V
V
V
V