QRD1114 Fairchild Semiconductor, QRD1114 Datasheet

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QRD1114

Manufacturer Part Number
QRD1114
Description
Photointerruptors PHOTO TRANS
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of QRD1114

Maximum Fall Time
50000 ns (Typ)
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
10000 ns (Typ)
Minimum Operating Temperature
- 40 C
Wavelength
940 nm
Sensing Method
Reflective
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Output Device
Phototransistor
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QRD1114_NL

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Manufacturer
Quantity
Price
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QRD1114
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FSC
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FAIRCHILD
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Part Number:
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ST
0
©2005 Fairchild Semiconductor Corporation
QRD1113, QRD1114 Rev. 1.1.0
Package Dimensions
QRD1113, QRD1114
Reflective Object Sensor
Features
Notes:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
3. Pins 2 and 4 typically .050" shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
CENTERLINE
Phototransistor Output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact Package
Daylight filter on sensor
OPTICAL
PIN 1 COLLECTOR
PIN 2 EMITTER
0.083 (2.11)
0.183 (4.65)
0.500 (12.7)
0.020 (0.51)
0.083 (2.11)
0.120 (3.05)
SQ. (4X)
PACKAGE DIMENSIONS
MIN
1
2
4
3
PIN 3 ANODE
PIN 4 CATHODE
0.173 (4.39)
0.240 (6.10)
0.100 (2.54)
PIN 1 INDICATOR
Description
The QRD1113/14 reflective sensor consists of an infra-
red emitting diode and an NPN silicon phototransistor
mounted side by side in a black plastic housing. The on-
axis radiation of the emitter and the on-axis response of
the detector are both perpendicular to the face of the
QRD1113/14. The phototransistor responds to radiation
emitted from the diode only when a reflective object or
surface is in the field of view of the detector.
Schematic
2
1
3
4
January 2008
www.fairchildsemi.com

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QRD1114 Summary of contents

Page 1

... Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 Description The QRD1113/14 reflective sensor consists of an infra- red emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing ...

Page 2

... CK 8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1 25°C unless otherwise specified) A ...

Page 3

... I - FORWARD CURRENT (mA) F Fig. 4 Normalized Collector Dark Current vs. Temperature 1 -50 - AMBIENT TEMPERATURE (˚C) A ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 Fig. 2 Normalized Collector Current vs. Forward Current 10.0 1.00 0.10 0. .05" .001 100 FORWARD CURRENT (mA 100 3 Fig ...

Page 4

... Datasheet Identification Product Status Advance Information Form Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 PDP-SPM™ FPS™ ® Power220 FRFET SM Power247 Global Power Resource POWEREDGE Green FPS™ Power-SPM™ ...

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