FDD850N10L Fairchild Semiconductor, FDD850N10L Datasheet

MOSFET N-CH 100V 15.7A DPAK-3

FDD850N10L

Manufacturer Part Number
FDD850N10L
Description
MOSFET N-CH 100V 15.7A DPAK-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD850N10L

Input Capacitance (ciss) @ Vds
1465pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
15.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
28.9nC @ 10V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
64 mOhms
Forward Transconductance Gfs (max / Min)
31 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
15.7 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD850N10L
Manufacturer:
FSC
Quantity:
20 000
Part Number:
FDD850N10LD
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. A5
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDD850N10L
N-Channel
100V, 15.7A, 75mΩ
Features
• R
• R
• Low Gate Charge ( Typ. 22.2nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
DS(on)
STG
rss
= 61mΩ ( Typ.) @ V
= 64mΩ ( Typ.) @ V
( Typ. 42pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
PowerTrench
G
GS
GS
= 10V, I
= 5V, I
S
D
D
= 12A
D-PAK
= 12A
T
C
= 25
®
D
Parameter
Parameter
MOSFET
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted*
C
= 25
o
C)
1
C
C
= 25
= 100
o
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Application
• DC to DC Converters / Synchronous Rectification
C
o
C)
o
C)
G
(Note 1)
(Note 2)
(Note 3)
D
S
Min.
-
-
-55 to +175
Rating
15.7
11.1
0.33
100
±20
300
6.0
63
41
50
December 2010
Max.
3.0
87
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

Related parts for FDD850N10L

FDD850N10L Summary of contents

Page 1

... Case for 5 Seconds Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. A5 ® MOSFET Description = 12A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advance PowerTrench process that has been especially = 12A D tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... ≤ 15.7A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD850N10L Rev. A5 Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250μA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = oss = rss = C gd 1000 100 *Note 1MHz 10 0 Drain-Source Voltage [V] DS FDD850N10L Rev. A5 Figure 2. Transfer Characteristics 100 10 1 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10V GS o *Note: T ...

Page 4

... 175 J 3. Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDD850N10L Rev. A5 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 μ 250 A D 0.0 50 100 150 200 Figure 10. Maximum Drain Current 18 15 μ ...

Page 5

... FDD850N10L Rev www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD850N10L Rev. A5 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDD850N10L Rev. A5 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD850N10L Rev. A5 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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