This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = oss = rss = C gd 1000 100 *Note 1MHz 10 0 Drain-Source Voltage [V] DS FDD850N10L Rev. A5 Figure 2. Transfer Characteristics 100 10 1 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10V GS o *Note: T ...
... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD850N10L Rev. A5 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD850N10L Rev. A5 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...