FDN8601 Fairchild Semiconductor, FDN8601 Datasheet
FDN8601
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FDN8601 Summary of contents
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... R Thermal Resistance, Junction to Case TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device 8601 FDN8601 ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C ® MOSFET General Description This N-Channel = 1 Semiconductor‘s advanced Power Trench = 1 been optimized for r ruggedness. ...
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... TJA R is guaranteed by design while R is determined by the user's board design. TJC TCA 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ° 3. Starting N-ch mH ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 ° ...
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... JUNCTION TEMPERATURE ( Figure 3. Normalized On- Resistance vs Junction Temperature 12 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted 100 125 150 - ...
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... Gate Charge Characteristics 125 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 300 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J 300 100 100 C J 0.01 0.001 PULSE WIDTH (sec MHz ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDN8601 Rev °C unless otherwise noted J SINGLE PULSE 180 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK T ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...