FDD86102LZ Fairchild Semiconductor, FDD86102LZ Datasheet

MOSFET N-CH 100V 8A DPAK

FDD86102LZ

Manufacturer Part Number
FDD86102LZ
Description
MOSFET N-CH 100V 8A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD86102LZ

Input Capacitance (ciss) @ Vds
1540pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22.5 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
31 mOhms
Forward Transconductance Gfs (max / Min)
31 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
42 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD86102LZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDD86102LZ
0
Company:
Part Number:
FDD86102LZ
Quantity:
7 500
©2010 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C
FDD86102LZ
N-Channel PowerTrench
100 V, 35 A, 22.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD86102LZ
DS(on)
DS(on)
= 22.5 mΩ at V
= 31 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
GS
= 4.5 V, I
FDD86102LZ
-Continuous (Silicon limited)
-Continuous
-Pulsed
= 10 V, I
Device
(TO-252)
D-PAK
TO-252
D
D
= 7 A
= 8 A
T
®
C
= 25 °C unless otherwise noted
MOSFET
Parameter
D
D-PAK(TO-252)
Package
1
T
T
T
T
T
General Description
This N-Channel MOSFET
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
Inverter
Synchronous Rectifier
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
S
Tape Width
is produced using Fairchild
12 mm
-55 to +150
Ratings
100
±20
3.1
2.3
42
35
40
84
54
40
8
®
process that has
www.fairchildsemi.com
October 2010
2500 units
Quantity
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDD86102LZ

FDD86102LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86102LZ FDD86102LZ ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev.C ® MOSFET General Description This N-Channel MOSFET = Semiconductor’s advanced PowerTrench = been especially tailored to minimize the on-state resistance and switching loss ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... JUNCTION TEMPERATURE ( T J Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev °C unless otherwise noted 2 μ 120 50 75 100 125 150 0. - 0.001 3 4 ...

Page 4

... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 2.3 C/W θ ASE TEMPERATURE ( T C Figure 11. Maximum Continuous Drain Current vs Case Temperature ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev °C unless otherwise noted J 2000 1000 100 125 Figure 10 4.5 V 0.05 100 ...

Page 5

... DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 0.005 -5 10 Figure 14. Junction-to-Case Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev °C unless otherwise noted PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation SINGLE PULSE 2.3 C/W θ ...

Page 6

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDD86102LZ Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

Related keywords