FDMS7676 Fairchild Semiconductor, FDMS7676 Datasheet

MOSFET N-CH 30V POWER56

FDMS7676

Manufacturer Part Number
FDMS7676
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7676

Input Capacitance (ciss) @ Vds
2960pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.4 mOhms
Forward Transconductance Gfs (max / Min)
64 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
4 ns
Minimum Operating Temperature
- 55 C
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7676
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS7676 Rev A
FDMS7676
N-Channel PowerTrench
30 V, 5.5 m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
Max r
Max r
Advanced Package and Silicon design for low r
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS7676
DS(on)
DS(on)
= 5.5 m
= 7.6 m
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
at V
at V
GS
GS
= 10 V, I
= 4.5 V, I
FDMS7676
-Continuous
-Continuous (Silicon limited)
-Pulsed
Power 56
Device
D
D
= 19 A
= 15 A
T
®
D
A
= 25 °C unless otherwise noted
D
DS(on)
MOSFET
Parameter
D
D
and high
Bottom
Power 56
Package
S
1
S
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
(Note 4)
8
5
6
7
DS(on)
Tape Width
,
12 mm
fast switching speed and body
-55 to +150
Ratings
±20
2.5
2.6
30
28
76
16
90
72
48
50
www.fairchildsemi.com
3000 units
4
3
2
1
Quantity
July 2009
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS7676 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMS7676 FDMS7676 ©2009 Fairchild Semiconductor Corporation FDMS7676 Rev A ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node = 15 A ringing of DC/DC converters using either synchronous or D conventional switching PWM controllers ...

Page 2

... JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7676 Rev °C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25 °C ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 90 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7676 Rev °C unless otherwise noted 3 1.5 2 100 125 150 100 o C 0 0.001 PULSE DURATION = DUTY CYCLE = 0 ...

Page 4

... Unclamped Inductive Switching Capability 200 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7676 Rev °C unless otherwise noted J 5000 1000 100 100 1000 100 s ...

Page 5

... Figure 13 di/dt = 300 TIMES (nS) Figure 14. Body Diode Reverse Recovery Characteristics FDMS7676 Rev °C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve 100 125 150 NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout FDMS7676 Rev www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7676 Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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