This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Figure 3. Normalized On Resistance vs Junction Temperature 200 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 100 T = 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS86322 Rev °C unless otherwise noted J P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 5 4 100 125 150 ...
... Unclamped Inductive Switching Capability 300 100 10 1 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS86322 Rev °C unless otherwise noted J 10000 1000 DD 100 100 125 100 2000 ...
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS86322 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...