FGH40N60SMD Fairchild Semiconductor, FGH40N60SMD Datasheet
FGH40N60SMD
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FGH40N60SMD Summary of contents
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... Maximum Lead Temp. for soldering T L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2010 Fairchild Semiconductor Corporation FGH40N60SMD Rev. A General Description o =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series J ...
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... Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time d(off) t Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts FGH40N60SMD Rev. A Parameter Package Reel Size TO-247 - T = 25°C unless otherwise noted C Test Conditions = 0V 250mA 0V 250mA ...
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... Q Gate to Collector Charge gc Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM E Reverse Recovery Energy rec t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH40N60SMD Rev. A (Continued) Test Conditions V = 400V 40A 15V 25°C unless otherwise noted C Test Conditions ...
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... 175 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1.5 1 100 Collector-EmitterCase Temperature, T FGH40N60SMD Rev. A Figure 2. Typical Output Characteristics 120 12V T 10V 100 [V] CE Figure 4. Transfer Characteristics 120 Common Emitter [V] CE Figure 6. Saturation Voltage vs. V ...
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... Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 4000 3000 2000 1000 0 0.1 1 Collector-Emitter Voltage, V Figure 11. SOA Characteristics 300 100 *Notes: 0 175 Single Pulse 0. Collector-Emitter Voltage, V FGH40N60SMD Rev. A Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 Common Emitter Common Emitter 0V 1MHz ...
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... Gate Resistance 1000 100 Gate Resistance, R Figure 15. Turn-off Characteristics vs. Collector Current 1000 t d(off) 100 Collector Current, I Figure 17. Switching Loss vs. Collector Current off 0 Collector Current, I FGH40N60SMD Rev. A Figure 14. Turn-on Characteristics vs. 1000 t d(off) 100 Common Emitter V = 400V 15V 40A 175 Figure 16. Switching Loss vs. ...
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... Forward Voltage, V Figure 23. Stored Charge 700 600 175 C C 500 400 300 200 di/dt = 200A 100 Forwad Current, I FGH40N60SMD Rev. A Figure 20. Load Current Vs. Frequency 120 Common Emitter 110 V = 15V GE 100 125 150 175 Figure 22. Reverse Current 1000 100 ...
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... FGH40N60SMD Rev. A Figure 25.Transient Thermal Impedance of IGBT single pulse - Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode - Rectangular Pulse Duration [sec Duty Factor t1/t2 ...
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... Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40N60SMD Rev www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH40N60SMD Rev. A ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...