FGH40N60SMDF Fairchild Semiconductor, FGH40N60SMDF Datasheet
FGH40N60SMDF
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FGH40N60SMDF Summary of contents
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... Maximum Lead Temp. for soldering T L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGH40N60SMDF Rev. B1 General Description o =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series J ...
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... Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time d(off) t Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts FGH40N60SMDF Rev. B1 Parameter Package Reel Size TO-247 - T = 25°C unless otherwise noted C Test Conditions = 0V 250μ 0V 250μ ...
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... Q Gate to Collector Charge gc Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM E Reverse Recovery Energy rec t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH40N60SMDF Rev. B1 (Continued) Test Conditions V = 400V 40A 15V 25°C unless otherwise noted C Test Conditions ...
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... GE 100 175 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1.5 1 100 Collector-EmitterCase Temperature, T FGH40N60SMDF Rev. B1 Figure 2. Typical Output Characteristics 120 12V T C 10V 100 [V] CE Figure 4. Transfer Characteristics 120 Common Emitter [V] CE Figure 6 ...
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... Gate-Emitter Voltage, V Figure 9. Capacitance Characteristics 4000 3000 2000 1000 0 0.1 1 Collector-Emitter Voltage, V Figure 11. SOA Characteristics 300 100 *Notes: 0 175 Single Pulse 0. Collector-Emitter Voltage, V FGH40N60SMDF Rev. B1 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 Common Emitter Common Emitter 0V 1MHz ...
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... Common Emitter Gate Resistance, R Figure 15. Turn-off Characteristics vs. Collector Current 1000 t d(off) 100 Collector Current, I Figure 17. Switching Loss vs. Collector Current off 0 Collector Current, I FGH40N60SMDF Rev. B1 Figure 14. Turn-on Characteristics vs. 1000 t d(off) 100 400V 15V 40A 175 Ω Figure 16. Switching Loss vs Common Emitter Ω 15V ...
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... Forward Voltage, V Figure 23. Stored Charge 2750 o 2500 175 C 2250 C 2000 1750 1500 1250 1000 μ di/dt = 200A/ s 750 500 250 Forwad Current, I FGH40N60SMDF Rev. B1 Figure 20. Load Current Vs. Frequency 120 Common Emitter 110 V = 15V GE 100 125 150 175 Figure 22. Reverse Current 1000 100 ...
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... Typical Performance Characteristics 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 1E-5 FGH40N60SMDF Rev. B1 Figure 25.Transient Thermal Impedance of IGBT single pulse 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0.1 1 www.fairchildsemi.com ...
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... Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40N60SMDF Rev www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH40N60SMDF Rev. B1 Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...