JS28F128P30BF75A NUMONYX, JS28F128P30BF75A Datasheet - Page 56

• Manufacturer Part Number: JS28F128P30BF75A
• Description: IC FLASH 128MBIT 65NM 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of JS28F128P30BF75A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TFSOP (0.551", 14.00mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

15.2
Table 29: Capacitance
15.3
Table 30: AC Read Specifications for 64/128- Mbit Densities (Sheet 1 of 2)
Datasheet
56
Notes:
1.
2.
3.
Asynchronous Specifications
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
R15
Latching Specifications
R101
R102
R103
R104
R105
R106
Num
R16
R17
Output Capacitance
Input Capacitance
Parameter
Capacitance values are for a single die; for 2-die and 4-die stacks, multiply the capacitance values by the number of
dies in the stack.
Sampled, but not 100% tested.
Silicon die capacitance only; add 1 pF for discrete packages.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
GHQZ
OH
EHEL
ELTV
EHTZ
GLTV
AVVH
ELVH
VLQV
VLVH
VHVL
VHAX
AVQV
Symbol
t
t
GHTZ
GLTX
Capacitance
AC Read Specifications
Read cycle time
Address to output valid
CE# low to output valid
OE# low to output valid
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
Output hold from first occurring address, CE#, or
OE# change
CE# pulse width high
CE# low to WAIT valid
CE# high to WAIT high-Z
OE# low to WAIT valid
OE# low to WAIT in low-Z
OE# high to WAIT in high-Z
Address setup to ADV# high
CE# low to ADV# high
ADV# low to output valid
ADV# pulse width low
ADV# pulse width high
Address hold from ADV# high
RST#, CLK, ADV#,
CE#, WE#, OE#,
Address, Data,
Data, WAIT
Signals
WP#
Min
Parameter
2
2
Typ
6
4
Max
7
5
Unit
pF
pF
Min
85
20
10
10
10
10
V
0
0
0
0
9
-
-
-
-
-
-
-
-
-
-
-
V
Max temp = 85 °C,
Typ temp = 25 °C,
CCQ
Discrete silicon die
CC
= (0 V - 2.0 V),
Condition
= (0 V - 3.6 V),
Max
150
85
85
25
24
24
17
20
17
20
85
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
August 2008
306666-12
Notes
Notes
1,2,3
1,2,3
1,2
1,3
1,3
1,3
1,3
1,4
1
1
1
1
P30