FSDM0565RELDTU Fairchild Semiconductor, FSDM0565RELDTU Datasheet

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FSDM0565RELDTU

Manufacturer Part Number
FSDM0565RELDTU
Description
IC PWM/SENSEFET 650V TO-220F-6
Manufacturer
Fairchild Semiconductor
Series
FPS™r
Datasheet

Specifications of FSDM0565RELDTU

Output Isolation
Isolated
Frequency Range
60kHz ~ 72kHz
Voltage - Input
9 V ~ 20 V
Voltage - Output
650V
Power (watts)
70W
Operating Temperature
-25°C ~ 85°C
Package / Case
TO-220-6 Full Pack Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2
© 2006 Fairchild Semiconductor Corporation
FPS
FSDM0465RE, FSDM0565RE, FSDM07652RE
Green Mode Fairchild Power Switch (FPS™)
Features
Applications
Ordering Information
Note:
1. WDTU: Forming Type.
FSDM0465REWDTU
FSDM0565REWDTU
FSDM07652REWDTU
Internal Avalanche-Rugged SenseFET
Advanced Burst-Mode Operation Consumes Under
1W at 240V
Precision Fixed Operating Frequency (66kHz)
Internal Start-up Circuit
Improved Pulse-by-Pulse Current Limiting
Over-Voltage Protection (OVP)
Overload Protection (OLP)
Internal Thermal Shutdown Function (TSD)
Auto-Restart Mode
Under-Voltage Lockout (UVLO) with hysteresis
Low Operating Current (2.5mA)
Built-in Soft-Start
SMPS for LCD monitor and STB
Adaptor
Product Number
TM
All packages are lead free per JEDEC: J-STD-020B standard.
is a trademark of Fairchild Semiconductor Corporation.
AC
& 0.5W load
(1)
TO-220F-6L (Forming)
TO-220F-6L (Forming)
TO-220F-6L (Forming)
Package
Marking Code
DM07652RE
DM0465RE
DM0565RE
Description
The FSDM0465RE, FSDM0565RE and FSDM07652RE
are an integrated Pulse Width Modulator (PWM) and
SenseFET specifically designed for high-performance
offline Switch Mode Power Supplies (SMPS) with
minimal external components. This device is an
integrated high-voltage power-switching regulator that
combines an avalanche-rugged SenseFET with a
current mode PWM control block. The PWM controller
includes an integrated fixed-frequency oscillator, under-
voltage lockout, leading-edge blanking (LEB), optimized
gate driver, internal soft-start, temperature-compensated
precise-current sources for a loop compensation, and
self-protection circuitry. Compared with a discrete
MOSFET and PWM controller solution, it can reduce total
cost;
simultaneously increasing efficiency, productivity, and
system reliability. This device is a basic platform well
suited for cost-effective designs of flyback converters.
component
BV
count,
650V
650V
650V
DSS
size,
and
R
DS(ON)
weight;
2.6 Ω
2.2 Ω
1.6 Ω
www.fairchildsemi.com
October 2007
Max.
while

Related parts for FSDM0565RELDTU

FSDM0565RELDTU Summary of contents

Page 1

... Note: 1. WDTU: Forming Type. All packages are lead free per JEDEC: J-STD-020B standard. FPS trademark of Fairchild Semiconductor Corporation. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 Description The FSDM0465RE, FSDM0565RE and FSDM07652RE are an integrated Pulse Width Modulator (PWM) and ...

Page 2

... Notes: 2. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient. 3. Maximum practical continuous power in an open-frame design at 50°C ambient. 4. 230V or 100/115V with doubler © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 V Drain str PWM V FB Source CC Figure 1 ...

Page 3

... Internal Block Diagram NC 5 0.5/0. ref delay Soft-start ovp TSD Figure 2. Functional Block Diagram of FSDM0x65RE © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0 start 8V/12V V good CC OSC PWM 2. good Drain str 6 1 Internal V ref Bias S Q Gate R Q driver ...

Page 4

... Name 1 Drain 2 GND str © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 TO-220F- str GND 1. Drain Figure 3. Pin Configuration (Top View) Description SenseFET drain. This pin is the high-voltage power SenseFET drain de- signed to drive the transformer directly. Ground. This pin is the control ground and the SenseFET source. ...

Page 5

... Junction-to-Ambient Thermal Resistance JA θ (8) Junction-to-Case Thermal Resistance JC Notes: 7. Free-standing, with no heat-sink, under natural convection. 8. Infinite cooling condition - refer to the SEMI G30-88. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 = 25°C, unless otherwise specified. A Parameter FSDM0465RE T =25°C C (5) FSDM0565RE T =25° ...

Page 6

... Switching Frequency Variation OSC I Feedback Source Current FB D Maximum Duty Cycle MAX D Minimum Duty Cycle MIN V START UVLO Threshold Voltage V STOP t Internal Soft-Start Time S/S © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 Condition V = 650V FSDM0465RE V = 520V 0V 650V FSDM0565RE ...

Page 7

... Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%. 10. These parameters, although guaranteed at the design, are not tested in production. 11. These parameters indicate the inductor current. 12. This parameter is the current flowing into the control IC. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 (Continued) Condition ...

Page 8

... Built into controller Burst-Mode Operation Output voltage drops to around half © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 FSDM0x65RE FSDM0x65RE Advantages Gradually increasing current limit during soft-start reduces peak current and volt- Internal soft-start with ...

Page 9

... Figure 6. Stop Threshold Voltage vs. Temp. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - Junction Temperature [°C] Figure 8. Maximum Duty Cycle vs. Temp. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 = 25°C. A 1.2 1.0 0.8 0.6 0.4 0.2 0.0 75 100 125 150 Figure 5 ...

Page 10

... Junction Temperature [°C] Figure 12. Over-Voltage Protection vs. Temp. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - Junction Temperature [°C] Figure 14. Burst-Mode Disable Voltage vs. Temp. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 (Continued) = 25°C. A 1.2 1.0 0.8 0.6 0.4 0.2 0.0 75 100 125 150 Figure 11 ...

Page 11

... Typical Performance Characteristics These characteristic graphs are normalized at T 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 - Junction Temperature [°C] Figure 16. Soft-Start Time vs. Temp. . © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 (Continued) = 25° 100 125 11 www.fairchildsemi.com ...

Page 12

... This event typically occurs when the input voltage is increased or the output load is decreased. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 2.1 Pulse-by-Pulse Current Limit: Because current- mode control is employed, the peak current through the ...

Page 13

... Figure 20. The delay time for shutdown is the time required to charge C from 2.5V to 6.0V with 3.5µ 50ms delay time is typical for most applications. © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0 Fault removed 6 ...

Page 14

... Burst-mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in standby mode. Vo set 0.7V 0. Switching disabled FSDM0565RE Rev: 00 Figure 21. Waveforms of Burst Operation © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 (700mV), BURH time Switching disabled T4 14 www.fairchildsemi.com ...

Page 15

... LF101 23mH R101 560kΩ C101 RT1 FUSE 220nF 5D-9 250V 275VAC 2A © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 Input Voltage Universal input 40W (85-265V ) AC input) input) AC input and 0.3W load) AC C104 R103 2.2nF 56kΩ ...

Page 16

... Insulation: Polyester Tape t = 0.050mm, 2 Layers 7 → Insulation: Polyester Tape t = 0.050mm, 2 Layers 3 → Outer Insulation: Polyester Tape t = 0.050mm, 2 Layers 4. Electrical Characteristics Inductance Leakage Inductance 5. Core & Bobbin Core: EER 3016 Bobbin: EER3016 Ae(mm2): 96 © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 EER3016 12V ...

Page 17

... C203 1000µF/10V C204 1000µF/10V C205 47nF/50V C301 4.7nF Inductor L201 5µH L202 5µH Diode D101 UF4007 © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 Note Part D102 D201 D202 ZD101 ZD102 1W BD101 1/4W 2W 1/4W LF101 1/4W 1/4W ...

Page 18

... Layout Figure 24. Layout Considerations for FSDM0565RE (Top View) Figure 25. Layout Considerations for FSDM0565RE (Bottom View) © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 18 www.fairchildsemi.com ...

Page 19

... Package Dimensions © 2006 Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 Figure 26. TO-220F-6L (Forming) 19 www.fairchildsemi.com ...

Page 20

... Fairchild Semiconductor Corporation FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.2 20 www.fairchildsemi.com ...

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