QSD2030 Fairchild Semiconductor, QSD2030 Datasheet

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QSD2030

Manufacturer Part Number
QSD2030
Description
Photodiodes T-1 3- 4 SENSOR
Manufacturer
Fairchild Semiconductor
Type
Plastic Silicon PIN Photodioder
Datasheets

Specifications of QSD2030

Lens Type
Clear Epoxy
Photodiode Material
Silicon
Peak Wavelength
880 nm
Half Intensity Angle Degrees
20 deg
Maximum Reverse Voltage
50 V
Maximum Power Dissipation
100 mW
Maximum Light Current
25 uA
Maximum Dark Current
10 nA
Maximum Rise Time
5 ns
Maximum Fall Time
5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Forward Voltage
1.3V
Dark Current (max)
10nA
Power Dissipation
100mW
Light Current
25uA
Rise Time
5ns
Fall Time
5ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSD2030
Manufacturer:
FSC
Quantity:
9 250
Part Number:
QSD2030
Manufacturer:
VISHAY
Quantity:
100
Part Number:
QSD2030F
Manufacturer:
TOSHIBA
Quantity:
20 980
Company:
Part Number:
QSD2030F
Quantity:
2 500
©2010 Fairchild Semiconductor Corporation
QSD2030 Rev. 1.1.1
QSD2030
Plastic Silicon Photodiode
Features
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
PIN photodiode
Package type: T-1 3/4 (5mm lens diameter)
Wide reception angle, 40°
Package material and color: clear epoxy
REFERENCE
SURFACE
0.020 (0.51)
SQ. (2X)
0.800 (20.3)
0.050 (1.25)
MIN
0.195 (4.95)
0.100 (2.54)
0.305 (7.75)
0.040 (1.02)
NOM
0.240 (6.10)
0.215 (5.45)
NOM
CATHODE
High sensitivity
Peak sensitivity
Radiant sensitive area: 1.245mm x 1.245mm
Schematic
= 880nm
CATHODE
ANODE
www.fairchildsemi.com
May 2010

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QSD2030 Summary of contents

Page 1

... SQ. (2X) Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2010 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.1 High sensitivity Peak sensitivity Radiant sensitive area: 1.245mm x 1.245mm 0.305 (7.75) 0.040 (1.02) NOM CATHODE 0 ...

Page 2

... Open Circuit Voltage O TC Temperature Coefficient Short Circuit Current SC TC Temperature Coefficient Capacitance t Rise Time r t Fall Time f ©2010 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) (1) (T =25°C) A Test Conditions I = 80mA 10V 0.5mW/cm ...

Page 3

... Ee–Emitter output power (mw/cm Figure 3. Capacitance vs. Reverse Voltage Vr–Reverse Voltage (V) ©2010 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.1 1.0 0.9 0.8 0.7 0.5 0.6 0.7 0.8 0 1.3 T 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ...

Page 4

... Product Status Identification Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation QSD2030 Rev. 1.1.1 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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