IS43DR16640A-3DBL INTEGRATED SILICON SOLUTION (ISSI), IS43DR16640A-3DBL Datasheet - Page 16

• Manufacturer Part Number: IS43DR16640A-3DBL
• Description: SDRAM, DDR2, 64M X 16, 1.8V, 84BGA
• Manufacturer: INTEGRATED SILICON SOLUTION (ISSI)

Specifications of IS43DR16640A-3DBL

• Access Time: 0.45ns
• Memory Case Style: BGA
• No. Of Pins: 84
• Memory Type: SDRAM
• Memory Configuration: 8 BLK (8M X 16)
• Page Size: 1GB
• Operating Temperature Range: 0°C To +70°C
• Frequency: 333MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43/46DR81280A, IS43/46DR16640A
Differential Signal Level Waveform
Differential AC Output Parameters
Note: The typical value of VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC)
indicates the voltage at which differential output signals must cross.
Overshoot and Undershoot Specification
AC Overshoot and Undershoot Specification for Address and Control Pins
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Specification for Clock, Data, Strobe and Mask Pins
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
AC Overshoot and Undershoot Definition Diagram
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. B, 06/01/2011
Maximum peak amplitude allowed for undershoot area
Maximum peak amplitude allowed for undershoot area
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for overshoot area
VOX(AC)
Symbol
Maximum undershoot area below VSSQ*
Maximum overshoot area above VDDQ*
Maximum undershoot area below VSS
Maximum overshoot area above VDD
Parameter
Parameter
AC differential crosspoint voltage
Parameter
*
*
DDR2-533
DDR2-533
0.23
0.23
0.5
0.5
0.8
0.8
0.5
0.5
0.5 x VDDQ-0.125
Min.
DDR2-667
DDR2-667
0.23
0.23
0.5
0.5
0.8
0.8
0.5
0.5
0.5 x VDDQ+0.125
DDR2-800
DDR2-800
0.66
0.66
0.23
0.23
0.5
0.5
0.5
0.5
Max.
Unit
V-ns
V-ns
Unit
V-ns
V-ns
V
V
V
V
Units
V
16