PSMN015-60PS NXP Semiconductors, PSMN015-60PS Datasheet - Page 9

• Manufacturer Part Number: PSMN015-60PS
• Description: MOSFET,N CH,60V,50A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN015-60PS_2
Objective data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(m Ω )
R
V
(V)
DSon
GS
60
45
30
15
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
12 V
(V) = 4.5
15
V
DS
10
= 30 V
30
4.7
20
48 V
45
All information provided in this document is subject to legal disclaimers.
Q
003aae038
G
003aae037
I
D
(nC)
(A)
5.5
6.5
10
Rev. 02 — 22 February 2010
30
60
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
N-channel 60 V 14.8 mΩ standard level MOSFET
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN015-60PS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aae034
(V)
C
C
C
iss
oss
rss
10
2
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