MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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1. Product profile
1.1 Description
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in each package.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
Table 1:
Pinning - SOT78, simplified outlines and symbol
Pin Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base;
connected to drain (d)
PSMN015-110P
TrenchMOS™ Standard level FET
Rev. 01 — 08 January 2004
Low on-state resistance
DC-to-DC converters
V
110 V
DS
P
300 W
tot
Simplified outline
mb
1 2
SOT78 (TO-220AB)
Low gate charge.
Switched-mode power supplies.
I
75 A
D
R
15 m
DSon
MBK106
3
Product data
Symbol
d
g
s
MBB076

PSMN015-110P,127 Summary of contents

  • Page 1

    ... Table 1: Pinning - SOT78, simplified outlines and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) PSMN015-110P TrenchMOS™ Standard level FET Rev. 01 — 08 January 2004 Low on-state resistance DC-to-DC converters V 110 300 W tot Simplified outline ...

  • Page 2

    ... T 175 175 100 pulsed Figure pulsed unclamped inductive load 0.11 ms starting T GS Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min - = Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Version Max Unit 110 V 110 ...

  • Page 3

    ... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 12544 Product data 03aa16 120 I der (%) 80 40 150 200 der Fig 2. Normalized continuous drain current Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET 100 150 ------------------- = 100 function of mounting base temperature 100 ...

  • Page 4

    ... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12544 Product data Conditions Figure 4 vertical in still air Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min Typ Max Unit - - 0 03am52 ...

  • Page 5

    ... Figure 175 100 175 Figure 7 and 175 MHz 1 5 Figure /dt = 100 Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET Min Typ Max 110 - - 4 500 - 2 100 32.4 40.5 Figure Figure 11 - 4900 - - 390 - - 220 - - 0.8 1 115 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

  • Page 6

    ... 4.8 V 4 4 (V) Fig 6. Transfer characteristics: drain current as a 03am55 5.2 V 5 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET > DSon 175 and 175 DSon function of gate-source voltage; typical values. ...

  • Page 7

    ... Product data 03aa32 ( 120 180 Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET min typ max ( gate-source voltage. 03am58 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 03aa35 ...

  • Page 8

    ... Product data 03am57 ( 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET (nC and © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 03am59 100 ...

  • Page 9

    ... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

  • Page 10

    ... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040108 HZG463a Product data (9397 750 12544) 9397 750 12544 Product data Rev. 01 — 08 January 2004 PSMN015-110P TrenchMOS™ Standard level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

  • Page 11

    ... SiliconMAX — trademark of Koninklijke Philips Electronics N.V. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 08 January 2004 Rev. 01 — 08 January 2004 PSMN015-110P PSMN015-110P TrenchMOS™ Standard level FET TrenchMOS™ Standard level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

  • Page 12

    ... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 08 January 2004 Document order number: 9397 750 12544 PSMN015-110P TrenchMOS™ Standard level FET ...