MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
PSMN015-110P
TO-220AB
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
drain-source voltage (DC)
DS
V
drain-gate voltage (DC)
DGR
V
gate-source voltage (DC)
GS
I
drain current (DC)
D
I
peak drain current
DM
P
total power dissipation
tot
T
storage temperature
stg
T
junction temperature
j
Source-drain diode
I
source (diode forward) current (DC) T
S
I
peak source (diode forward) current T
SM
Avalanche ruggedness
E
non-repetitive drain-source
DS(AL)S
avalanche energy
9397 750 12544
Product data
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
Conditions
25 C
T
175 C
j
25 C
T
175 C; R
j
T
= 25 C; V
= 10 V;
mb
GS
T
= 100 C; V
= 10 V;
mb
GS
T
= 25 C; pulsed; t
mb
T
= 25 C;
Figure 1
mb
= 25 C
mb
= 25 C; pulsed; t
mb
unclamped inductive load; I
t
= 0.11 ms; V
50 V; R
p
DD
V
= 10 V; starting T
GS
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
Min
-
= 20 k
-
GS
-
Figure 2
and
3
-
Figure 2
-
10 s;
Figure 3
-
p
-
55
55
-
10 s
-
p
= 36 A;
-
D
= 50 ;
GS
= 25 C
j
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Version
Max
Unit
110
V
110
V
20
V
75
A
60.8
A
240
A
300
W
+175
C
+175
C
75
A
240
A
320
mJ
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