MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
120
P der
(%)
80
40
0
0
50
100
P
tot
---------------------- -
P
=
100%
der
P
tot 25 C
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
10 3
I D
Limit R DSon = V DS / I D
(A)
10 2
10
1
1
T
= 25 C; I
is single pulse; V
mb
DM
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12544
Product data
03aa16
120
I der
(%)
80
40
150
200
T mb ( C)
I
der
Fig 2. Normalized continuous drain current as a
DC
10
= 10 V.
GS
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
0
0
50
100
150
T mb ( C)
I
D
-------------------
=
100%
I
D 25 C
function of mounting base temperature.
t p = 10 s
100 s
1 ms
10 ms
10 2
V DS (V)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
03an67
200
03ao25
10 3
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