MOSFET N-CH 110V 75A TO220AB

PSMN015-110P,127

Manufacturer Part NumberPSMN015-110P,127
DescriptionMOSFET N-CH 110V 75A TO220AB
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PSMN015-110P,127 datasheet
 


Specifications of PSMN015-110P,127

Package / CaseTO-220AB-3Mounting TypeThrough Hole
Power - Max300WFet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs90nC @ 10VVgs(th) (max) @ Id4V @ 1mA
Current - Continuous Drain (id) @ 25° C75ADrain To Source Voltage (vdss)110V
Fet FeatureStandardRds On (max) @ Id, Vgs15 mOhm @ 25A, 10V
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage110 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current75 APower Dissipation300000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names934057141127::PSMN015-110P::PSMN015-110P
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Philips Semiconductors
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
D
L
DIMENSIONS (mm are the original dimensions)
A
b
b 1
A 1
UNIT
4.5
1.39
0.9
1.3
mm
4.1
1.27
0.7
1.0
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
SOT78
Fig 14. SOT78 (TO-220AB).
9397 750 12544
Product data
E
p
q
D 1
L 2
(1)
L 1
b 1
1
2
3
b
e
e
0
5
scale
D
E
e
c
D 1
0.7
15.8
6.4
10.3
2.54
0.4
15.2
5.9
9.7
REFERENCES
JEDEC
EIAJ
3-lead TO-220AB
SC-46
Rev. 01 — 08 January 2004
PSMN015-110P
TrenchMOS™ Standard level FET
A
A 1
mounting
base
Q
c
10 mm
L 2
(1)
L
L 1
p
q
max.
15.0
3.30
3.8
3.0
3.0
13.5
2.79
3.6
2.7
EUROPEAN
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
SOT78
Q
2.6
2.2
ISSUE DATE
00-09-07
01-02-16
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